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Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method
http://hdl.handle.net/10487/00017118
http://hdl.handle.net/10487/00017118aa3a38d5-a9d4-4001-bb19-8bbe8bb1ecb8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
02 Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method (2.0 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2021-08-17 | |||||
| タイトル | ||||||
| タイトル | Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion beam induced epitaxial crystallization | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electron beam induced epitaxial crys-tallization | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | nuclear energy deposition | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | electronic energy deposition | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Rutherford backscattering spectroscopy | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
Hoshino, Yasushi
× Hoshino, Yasushi× Nakata, Jyoji |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the crystallization of an amorphous Si layer grown on single crystalline Si substrates enhanced by irradiation with various energetic particles. We com-prehensively compared the crystallization rate on 150-keV proton beam irradiation with that on 8-MeV electron beam irradiation under the same condition of displaced atom density to examine the effect of inelastic energy deposition on crystallization, since the electronic energy loss in Si for a 150-keV proton is significantly different from that for an 8-MeV elec-tron. The crystallization rate was quantitatively analyzed by the Rutherford backscattering channeling method. Consequently, recrystallization of the amorphous Si layer was only ob-served in the case of proton beam irradiation. We proposed some factors to explain the beam induced crystallization process observed with high-energy proton and electron irradiation. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Full-Length Paper | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | By a grant from Research Institute for Integrated Science, Kanagawa University | |||||
| 書誌情報 |
en : Science Journal of Kanagawa University 巻 32, p. 11-15, 発行日 2021-06-30 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1880-0483 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA12068302 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | 神奈川大学総合理学研究所 | |||||
| 出版者 | ||||||
| 出版者 | Research Institute for Integrated Science, Kanagawa University | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Departmental Bulletin Paper | |||||
