{"created":"2023-05-15T11:51:54.454347+00:00","id":14041,"links":{},"metadata":{"_buckets":{"deposit":"d753704b-e924-48ca-afea-95247748b78e"},"_deposit":{"created_by":10,"id":"14041","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"14041"},"status":"published"},"_oai":{"id":"oai:kanagawa-u.repo.nii.ac.jp:00014041","sets":["376:377:378:1342"]},"author_link":["33602","33614","33602","33614"],"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-06-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"15","bibliographicPageStart":"11","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"Science Journal of Kanagawa University","bibliographic_titleLang":"en"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We investigated the crystallization of an amorphous Si layer grown on single crystalline Si substrates enhanced by irradiation with various energetic particles. We com-prehensively compared the crystallization rate on 150-keV proton beam irradiation with that on 8-MeV electron beam irradiation under the same condition of displaced atom density to examine the effect of inelastic energy deposition on crystallization, since the electronic energy loss in Si for a 150-keV proton is significantly different from that for an 8-MeV elec-tron. The crystallization rate was quantitatively analyzed by the Rutherford backscattering channeling method. Consequently, recrystallization of the amorphous Si layer was only ob-served in the case of proton beam irradiation. We proposed some factors to explain the beam induced crystallization process observed with high-energy proton and electron irradiation.","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Departmental Bulletin Paper","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Full-Length Paper","subitem_description_type":"Other"},{"subitem_description":"By a grant from Research Institute for Integrated Science, Kanagawa University","subitem_description_type":"Other"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川大学総合理学研究所"},{"subitem_publisher":"Research Institute for Integrated Science, Kanagawa University"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12068302","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1880-0483","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoshino, Yasushi"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Nakata, Jyoji"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-08-18"}],"displaytype":"detail","filename":"02 Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method.pdf","filesize":[{"value":"2.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"02 Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method","url":"https://kanagawa-u.repo.nii.ac.jp/record/14041/files/02 Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method.pdf"},"version_id":"5023c8f3-f9cc-4e25-bf22-c43eff7e8b5b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ion beam induced epitaxial crystallization","subitem_subject_scheme":"Other"},{"subitem_subject":"electron beam induced epitaxial crys-tallization","subitem_subject_scheme":"Other"},{"subitem_subject":"nuclear energy deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"electronic energy deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"Rutherford backscattering spectroscopy","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method","subitem_title_language":"en"}]},"item_type_id":"3","owner":"10","path":["1342"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-08-17"},"publish_date":"2021-08-17","publish_status":"0","recid":"14041","relation_version_is_last":true,"title":["Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-06-19T02:09:48.468885+00:00"}