@article{oai:kanagawa-u.repo.nii.ac.jp:00014041,
 author = {Hoshino, Yasushi and Nakata, Jyoji},
 journal = {Science Journal of Kanagawa University},
 month = {Jun},
 note = {We investigated the crystallization of an amorphous Si layer grown on single crystalline Si substrates enhanced by irradiation with various energetic particles. We com-prehensively compared the crystallization rate on 150-keV proton beam irradiation with that on 8-MeV electron beam irradiation under the same condition of displaced atom density to examine the effect of inelastic energy deposition on crystallization, since the electronic energy loss in Si for a 150-keV proton is significantly different from that for an 8-MeV elec-tron. The crystallization rate was quantitatively analyzed by the Rutherford backscattering channeling method. Consequently, recrystallization of the amorphous Si layer was only ob-served in the case of proton beam irradiation. We proposed some factors to explain the beam induced crystallization process observed with high-energy proton and electron irradiation., Departmental Bulletin Paper, Full-Length Paper, By a grant from Research Institute for Integrated Science, Kanagawa University},
 pages = {11--15},
 title = {Crystallization of Amorphous Si Layer Assisted by Quantum Beam Irradiation Studied by Rutherford Backscattering Channeling Method},
 volume = {32},
 year = {2021}
}