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Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy
http://hdl.handle.net/10487/00015990
http://hdl.handle.net/10487/000159902891274c-f564-431a-8b55-d9a6f4c411d6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
01 Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy (2.3 MB)
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| Item type | その他 / Others(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-03-13 | |||||
| タイトル | ||||||
| タイトル | Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題 | nanocrystal, scanning tunneling microscope, electroluminescence, silicon carbide, resonant elastic Rutherford backscattering, nanocrystal, scanning tunneling microscope, electroluminescence, silicon carbide, resonant elastic Rutherford backscattering | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_1843 | |||||
| 資源タイプ | other | |||||
| 著者 |
Hoshino, Yasushi
× Hoshino, Yasushi× Soga, Yu× Nakata, Jyoji |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(001) surface, aiming at sample preparation for scanning tunneling luminescence using a novel conductive transparency probe. Two methods for C implantation and CO diffusion to SiO2/Si(001) samples were adopred for the formation of nanocrystalline SiC aligned on the Si(001) surface. The characterization of NCs: crystalline structure, shape, size and areal density, were analyzed by reflection high-energy electron diffraction, scanning probe microscopy and Rutherford backscattering spectroscopy. The C implantation method could not form sufficient NCs on the surface since the diffusion of C to the interface was not adequarely promoted by thermal annealing. On the other hand, almost an ideal structure of SiC NCs of ~10 nm on the Si(001) surface was realized by CO annealing under 0.2 bar at 1100 ℃ for 0.5 h. The size of NCs primarily depends on the annealing time: the annealing conditions should be optimized for further decrement of the NC size. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Full-Length Paper | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | By a grant from Research Institute for Integrated Science, Kanagawa University | |||||
| 書誌情報 |
Science Journal of Kanagawa University 巻 30, p. 1-7, 発行日 2019-06-30 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1880-0483 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA12068302 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 出版者 | ||||||
| 出版者 | 神奈川大学総合理学研究所 | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Departmental Bulletin Paper | |||||
