| Item type |
その他 / Others(1) |
| 公開日 |
2020-03-13 |
| タイトル |
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|
タイトル |
Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy |
| 言語 |
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言語 |
eng |
| キーワード |
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主題 |
nanocrystal, scanning tunneling microscope, electroluminescence, silicon carbide, resonant elastic Rutherford backscattering, nanocrystal, scanning tunneling microscope, electroluminescence, silicon carbide, resonant elastic Rutherford backscattering |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_1843 |
|
資源タイプ |
other |
| 著者 |
Hoshino, Yasushi
Soga, Yu
Nakata, Jyoji
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(001) surface, aiming at sample preparation for scanning tunneling luminescence using a novel conductive transparency probe. Two methods for C implantation and CO diffusion to SiO2/Si(001) samples were adopred for the formation of nanocrystalline SiC aligned on the Si(001) surface. The characterization of NCs: crystalline structure, shape, size and areal density, were analyzed by reflection high-energy electron diffraction, scanning probe microscopy and Rutherford backscattering spectroscopy. The C implantation method could not form sufficient NCs on the surface since the diffusion of C to the interface was not adequarely promoted by thermal annealing. On the other hand, almost an ideal structure of SiC NCs of ~10 nm on the Si(001) surface was realized by CO annealing under 0.2 bar at 1100 ℃ for 0.5 h. The size of NCs primarily depends on the annealing time: the annealing conditions should be optimized for further decrement of the NC size. |
| 内容記述 |
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内容記述タイプ |
Other |
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内容記述 |
Full-Length Paper |
| 内容記述 |
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内容記述タイプ |
Other |
|
内容記述 |
By a grant from Research Institute for Integrated Science, Kanagawa University |
| 書誌情報 |
Science Journal of Kanagawa University
巻 30,
p. 1-7,
発行日 2019-06-30
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| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1880-0483 |
| 書誌レコードID |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA12068302 |
| 著者版フラグ |
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|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 出版者 |
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出版者 |
神奈川大学総合理学研究所 |
| 資源タイプ |
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内容記述タイプ |
Other |
|
内容記述 |
Departmental Bulletin Paper |
01 Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy (2.3 MB)
