{"created":"2023-05-15T11:51:03.452737+00:00","id":12899,"links":{},"metadata":{"_buckets":{"deposit":"332a2b35-0d3a-47ae-baef-ec3061475be4"},"_deposit":{"created_by":10,"id":"12899","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"12899"},"status":"published"},"_oai":{"id":"oai:kanagawa-u.repo.nii.ac.jp:00012899","sets":["376:377:378:1252"]},"author_link":["33602","34298","33614"],"item_2_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-06-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"7","bibliographicPageStart":"1","bibliographicVolumeNumber":"30","bibliographic_titles":[{"bibliographic_title":"Science Journal of Kanagawa University"}]}]},"item_2_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We investigated the synthesis of SiC nanocrystals (NCs) of several nanometers on a crystalline Si(001) surface, aiming at sample preparation for scanning tunneling luminescence using a novel conductive transparency probe. Two methods for C implantation and CO diffusion to SiO2/Si(001) samples were adopred for the formation of nanocrystalline SiC aligned on the Si(001) surface. The characterization of NCs: crystalline structure, shape, size and areal density, were analyzed by reflection high-energy electron diffraction, scanning probe microscopy and Rutherford backscattering spectroscopy. The C implantation method could not form sufficient NCs on the surface since the diffusion of C to the interface was not adequarely promoted by thermal annealing. On the other hand, almost an ideal structure of SiC NCs of ~10 nm on the Si(001) surface was realized by CO annealing under 0.2 bar at 1100 ℃ for 0.5 h. The size of NCs primarily depends on the annealing time: the annealing conditions should be optimized for further decrement of the NC size.","subitem_description_type":"Abstract"}]},"item_2_description_40":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Departmental Bulletin Paper","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Full-Length Paper","subitem_description_type":"Other"},{"subitem_description":"By a grant from Research Institute for Integrated Science, Kanagawa University","subitem_description_type":"Other"}]},"item_2_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川大学総合理学研究所"}]},"item_2_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12068302","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1880-0483","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoshino, Yasushi"}],"nameIdentifiers":[{"nameIdentifier":"33602","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"33602","nameIdentifierScheme":"ローカル著者ID","nameIdentifierURI":" "}]},{"creatorNames":[{"creatorName":"Soga, Yu"}],"nameIdentifiers":[{"nameIdentifier":"34298","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Jyoji"}],"nameIdentifiers":[{"nameIdentifier":"33614","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"33614","nameIdentifierScheme":"ローカル著者ID","nameIdentifierURI":" "}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-17"}],"displaytype":"detail","filename":"01 Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy.pdf","filesize":[{"value":"2.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"01 Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy","url":"https://kanagawa-u.repo.nii.ac.jp/record/12899/files/01 Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy.pdf"},"version_id":"ecd5fa5c-5f2e-4a46-a6f6-2584b798377d"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"nanocrystal","subitem_subject_scheme":"Other"},{"subitem_subject":"scanning tunneling microscope","subitem_subject_scheme":"Other"},{"subitem_subject":"electroluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon carbide","subitem_subject_scheme":"Other"},{"subitem_subject":"resonant elastic Rutherford backscattering","subitem_subject_scheme":"Other"},{"subitem_subject":"nanocrystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"scanning tunneling microscope","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"electroluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon carbide","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"resonant elastic Rutherford backscattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"other","resourceuri":"http://purl.org/coar/resource_type/c_1843"}]},"item_title":"Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy"}]},"item_type_id":"2","owner":"10","path":["1252"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-03-13"},"publish_date":"2020-03-13","publish_status":"0","recid":"12899","relation_version_is_last":true,"title":["Formation of SiC Nanocrystals Aligned at the SiO2／Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-05-15T16:56:43.731821+00:00"}