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Local Atomic Structures around Implanted Phosphorus Atoms in Diamond Analyzed by X-ray Absorption Near Edge Structure
https://doi.org/10.24792/0002000081
https://doi.org/10.24792/000200008160f64b7b-dffe-4df1-853c-52c79d576567
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
01 Local Atomic Structures around Implanted Phosphorus Atoms in Diamond Analyzed by X-ray Absorption Near Edge Structure.pdf (2.7 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||
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| 公開日 | 2023-09-13 | |||||||||
| タイトル | ||||||||||
| タイトル | Local Atomic Structures around Implanted Phosphorus Atoms in Diamond Analyzed by X-ray Absorption Near Edge Structure | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | ion implantation doping, | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | chemical bonding structure, | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | synchrotron radiation light | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | X-ray absorption fine structure | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | DFT calculation | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | departmental bulletin paper | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24792/0002000081 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Hoshino, Yasushi
× Hoshino, Yasushi× Yuhei Seki
× Mitsuhara, Kei
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Formation of highly controlled p-type and n-type conductive layers in diamond by ion implantation technique has been strongly desired for realizing diamond-based electronic devices for decades; however practically available doping condition has not been found especially in n-type doping. In this study, we comprehensively determined the local structures and depth profiles of implanted P atoms as n-type dopant to find out the origin of inactivation of implanted P atoms. The local structure around the implanted P atoms was analyzed by X-ray absorption fine structure using synchrotron-radiation-light and the first-principle calculation based on density functional theory. We found at least four components for all prepared samples in the near edge X-ray absorption structure, suggesting that implanted P atoms locate in four different chemical environments. We eventually assigned all the components by comparing the simulated X-ray absorption with the first-principle theoretical calculation: one of the components corresponds to active phosphorus atom in the substitutional site, and others are the elemental P-P bonds and some defect complexes probably acting as inactive species for n-type dopant. These facts suggest that the knowledge of local structure of implanted P atoms and control of them are substantially important to reduce the inactivation factors of the implanted dopants. | |||||||||
| 言語 | en | |||||||||
| 内容記述 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | Full-Length Paper By a grant from Research Institute for Integrated Science, Kanagawa University | |||||||||
| 言語 | en | |||||||||
| 書誌情報 |
Science Journal of Kanagawa University en : Science Journal of Kanagawa University 巻 34, p. 1-7, 発行日 2023-07-30 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | PISSN | |||||||||
| 収録物識別子 | 1880-0483 | |||||||||
| 書誌レコードID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA12068302 | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 出版者 | ||||||||||
| 出版者 | 神奈川大学総合理学研究所 | |||||||||
| 言語 | ja | |||||||||
| 出版者 | ||||||||||
| 出版者 | Research Institute for Integrated Science, Kanagawa University | |||||||||
| 言語 | en | |||||||||
