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IIa型CVDダイヤモンド基板にｎ型ドーパント元素をイオン注入しポストアニールによって形成した電気伝導層の電気特性
http://hdl.handle.net/10487/00016658
http://hdl.handle.net/10487/0001665896a873ad-8fc4-47cc-8482-1b48d8d4cec2
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
07 IIa型CVDダイヤモンド基板にｎ型ドーパント元素をイオン注入しポストアニールによって形成した電気伝導層の電気特性 (2.6 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-01-12 | |||||
| タイトル | ||||||
| タイトル | IIa型CVDダイヤモンド基板にｎ型ドーパント元素をイオン注入しポストアニールによって形成した電気伝導層の電気特性 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Electrical Properties of IIa-Type Diamond Substrates Implanted with n-Type Dopant Elements and Those After Annealing | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion implantation | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | diamond | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | hopping conduction | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ion-implanted defects | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
中田, 穣治
× 中田, 穣治× 稲垣, 俊哉× 関, 裕平× 星野, 靖 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We measured sheet resistances of IIa-type diamond substrates implanted with P ions at a 900℃ substrate temperature and room temperature (RT). Also, O ions were implanted at RT only. P and O elements have been considered possible donor candidates in diamond substrates. However, there has been no report on successfully achieving n -type conductivity using ion implantation methods in reproducible and reliable ways. Electrical measurements were performed just after implantation and after subsequent annealing at 1150℃ and 1300℃. Concerning P-implanted samples at 900℃ , we recorded activation energy of 0.6 eV for samples after implantation and after 1150℃ post-annealing with flat and average concentrations of 5.0×1019/ cm3 and 5.0×1020/cm3. This 0.6 eV value was obtained within a 300~600℃ temperature range and corresponded to marked P activation energy. Concerning O-implanted samples at RT, sheet resistances show higher values with increasing but not decreasing temperatures. This hysteresis phenomenon also appeared in RT P-implantation cases. It can be concluded that in both P and O RT-implanted cases, defects introduced during implantation would be annealed during sheet resistance measurements in the increasing temperature stage. It is suggested that 900℃ implantation is favorable for RT implantation, in the sense of achieving activation energy of 0.6 eV , which is thought to be the ionization energy of P-implanted samples. However, in almost all samples measured in the present experiments, we cannot judge n -type conduction by Hall Effect measurements. This fact strongly suggests that hopping conduction occurred in the subband formed in the wide band gap in the diamond substrate. It is suggested that this sub-band is formed by secondary defects consisting of stacking faults or dislocations resulting from primary defects of vacancies and interstitials introduced by RT ion implantation. It is proposed that the IBIEC (Ion-Beam-Induced Epitaxial Crystallization) method is favorable to any other annealing method such as furnace annealing, rapid thermal annealing, and electron or laser beam annealing, in order to reduce secondary defects that might cause the formation of a conductive sub-band in the wide-band gap of the diamond substrates. This is because IBIEC is a low-temperature annealing method involving a non-equilibrium process. Low temperature decreases the formation of secondary defects, resulting in reducing the formation of conductive sub-bands. Eventually, hopping conduction would not occur, and p -type or n -type conduction might be expected . It is concluded that fundamental and basic research is needed on the mechanism of defect formation during ion implantation into diamond substrates, and on the mechanism of secondary defects during electrical measurement and annealing. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 原著 | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 2019年度神奈川大学総合理学研究所共同研究助成論文 | |||||
| 書誌情報 |
en : Science Journal of Kanagawa University 巻 31, p. 41-51, 発行日 2020-10-30 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1880-0483 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA12068302 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| その他の言語のタイトル | ||||||
| その他のタイトル | Electrical Properties of IIa-Type Diamond Substrates Implanted with n-Type Dopant Elements and Those After Annealing | |||||
| 出版者 | ||||||
| 出版者 | 神奈川大学総合理学研究所 | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Departmental Bulletin Paper | |||||
