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低次元シリコンカーバイドのSi結晶構造依存性
http://hdl.handle.net/10487/00016657
http://hdl.handle.net/10487/00016657d9e6f893-d3a0-4fc4-a64c-7296eefcbc30
名前 / ファイル | ライセンス | アクション |
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06 低次元シリコンカーバイドのSi結晶構造依存性 (2.1 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2021-01-12 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 低次元シリコンカーバイドのSi結晶構造依存性 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | SiC Nano-Dots in Insulator and Semiconductor | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | quantum-dot | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 3C-SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | hexagonal-SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Si-based photonics | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | qantum confinement | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | hot-ion implantation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | oxide | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
水野, 智久
× 水野, 智久× 鮫島, 俊之× 青木, 孝 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We experimentally studied the material structure and photoluminescence (PL) properties of SiC quantum-dots (QD) in a SiO2 layer (Si+/C+-OX) fabricated by double hot-Si+/C+ ion implantation into SiO2 and post N2 annealing, comparing with those of SiC-dots by single hot-C+ ion implanted oxide (C+-OX) and crystal-Si layers (C+-Si). X-ray photoemission spectroscopy for Si+/C+-OX confirmed Si-C bonds even in SiO2, which is the direct verification of SiC formation in SiO2. Moreover, transmission electron microscope analyses showed that 2-nmdiameter SiC-dots with clear lattice spots were successfully formed in Si+/C+-OX. After N2 annealing, we demonstrated strong PL emission from Si+/C+-OX, and the PL intensity (IPL) of Si+/ C+-OX is approximately 2.6 and 12 times greater than those of C+-Si and C+-OX, respectively. The greater IPL of Si+/C+-OX may be attributable to QD-induced PL-efficiency enhancement in Si+/C+-OX. Moreover, PL photon energy at the peak IPL of Si+/C+-OX rapidly increases to approximately .4 eV after N2 annealing. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 原著 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 2019年度神奈川大学総合理学研究所共同研究助成論文 | |||||
書誌情報 |
en : Science Journal of Kanagawa University 巻 31, p. 33-39, 発行日 2020-10-30 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1880-0483 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12068302 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
その他の言語のタイトル | ||||||
その他のタイトル | SiC Nano-Dots in Insulator and Semiconductor | |||||
出版者 | ||||||
出版者 | 神奈川大学総合理学研究所 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | Departmental Bulletin Paper |