@article{oai:kanagawa-u.repo.nii.ac.jp:00013570,
 author = {水野, 智久 and 鮫島, 俊之 and 青木, 孝},
 journal = {Science Journal of Kanagawa University},
 month = {Oct},
 note = {We experimentally studied the material structure and photoluminescence (PL) properties of SiC quantum-dots (QD) in a SiO2 layer (Si+/C+-OX) fabricated by double hot-Si+/C+ ion implantation into SiO2 and post N2 annealing, comparing with those of SiC-dots by single hot-C+ ion implanted oxide (C+-OX) and crystal-Si layers (C+-Si). X-ray photoemission spectroscopy for Si+/C+-OX confirmed Si-C bonds even in SiO2, which is the direct verification of SiC formation in SiO2. Moreover, transmission electron microscope analyses showed that 2-nmdiameter SiC-dots with clear lattice spots were successfully formed in Si+/C+-OX. After N2 annealing, we demonstrated strong PL emission from Si+/C+-OX, and the PL intensity (IPL) of Si+/ C+-OX is approximately 2.6 and 12 times greater than those of C+-Si and C+-OX, respectively. The greater IPL of Si+/C+-OX may be attributable to QD-induced PL-efficiency enhancement in Si+/C+-OX. Moreover, PL photon energy at the peak IPL of Si+/C+-OX rapidly increases to approximately .4 eV after N2 annealing., Departmental Bulletin Paper, 原著, 2019年度神奈川大学総合理学研究所共同研究助成論文},
 pages = {33--39},
 title = {低次元シリコンカーバイドのSi結晶構造依存性},
 volume = {31},
 year = {2020}
}