{"created":"2023-05-15T11:51:33.771618+00:00","id":13570,"links":{},"metadata":{"_buckets":{"deposit":"4670e034-b84f-4e23-8803-126fb49916a0"},"_deposit":{"created_by":10,"id":"13570","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"13570"},"status":"published"},"_oai":{"id":"oai:kanagawa-u.repo.nii.ac.jp:00013570","sets":["376:377:378:1311"]},"author_link":["33611","35260","35261","33611","35258","35259"],"item_3_alternative_title_20":{"attribute_name":"その他の言語のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"SiC Nano-Dots in Insulator and Semiconductor"}]},"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-10-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"39","bibliographicPageStart":"33","bibliographicVolumeNumber":"31","bibliographic_titles":[{"bibliographic_title":"Science Journal of Kanagawa University","bibliographic_titleLang":"en"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We experimentally studied the material structure and photoluminescence (PL) properties of SiC quantum-dots (QD) in a SiO2 layer (Si+/C+-OX) fabricated by double hot-Si+/C+ ion implantation into SiO2 and post N2 annealing, comparing with those of SiC-dots by single hot-C+ ion implanted oxide (C+-OX) and crystal-Si layers (C+-Si). X-ray photoemission spectroscopy for Si+/C+-OX confirmed Si-C bonds even in SiO2, which is the direct verification of SiC formation in SiO2. Moreover, transmission electron microscope analyses showed that 2-nmdiameter SiC-dots with clear lattice spots were successfully formed in Si+/C+-OX. After N2 annealing, we demonstrated strong PL emission from Si+/C+-OX, and the PL intensity (IPL) of Si+/ C+-OX is approximately 2.6 and 12 times greater than those of C+-Si and C+-OX, respectively. The greater IPL of Si+/C+-OX may be attributable to QD-induced PL-efficiency enhancement in Si+/C+-OX. Moreover, PL photon energy at the peak IPL of Si+/C+-OX rapidly increases to approximately .4 eV after N2 annealing.","subitem_description_type":"Abstract"}]},"item_3_description_40":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Departmental Bulletin Paper","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"原著","subitem_description_type":"Other"},{"subitem_description":"2019年度神奈川大学総合理学研究所共同研究助成論文","subitem_description_type":"Other"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川大学総合理学研究所"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12068302","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1880-0483","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"水野, 智久"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"鮫島, 俊之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"青木, 孝"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-01-13"}],"displaytype":"detail","filename":"06 低次元シリコンカーバイドのSi結晶構造依存性.pdf","filesize":[{"value":"2.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"06 低次元シリコンカーバイドのSi結晶構造依存性","url":"https://kanagawa-u.repo.nii.ac.jp/record/13570/files/06 低次元シリコンカーバイドのSi結晶構造依存性.pdf"},"version_id":"4834d3af-9f4c-431f-9843-d2516cfe821b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum-dot","subitem_subject_scheme":"Other"},{"subitem_subject":"3C-SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"hexagonal-SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-based photonics","subitem_subject_scheme":"Other"},{"subitem_subject":"qantum confinement","subitem_subject_scheme":"Other"},{"subitem_subject":"hot-ion implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"oxide","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"低次元シリコンカーバイドのSi結晶構造依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低次元シリコンカーバイドのSi結晶構造依存性","subitem_title_language":"ja"},{"subitem_title":"SiC Nano-Dots in Insulator and Semiconductor","subitem_title_language":"en"}]},"item_type_id":"3","owner":"10","path":["1311"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-01-12"},"publish_date":"2021-01-12","publish_status":"0","recid":"13570","relation_version_is_last":true,"title":["低次元シリコンカーバイドのSi結晶構造依存性"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-06-19T02:09:02.250443+00:00"}