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イオン注入したダイヤモンド半導体のMeV級イオンビーム照射による電気的活性化の研究 : 高品質ダイヤモンド薄膜の形成と評価の研究(2)
http://hdl.handle.net/10487/1455
http://hdl.handle.net/10487/14555928736b-0f17-420b-babf-8c6ea1b1449e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
SJKU Vol 18 45-53.pdf (1.2 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2009-02-23 | |||||
| タイトル | ||||||
| タイトル | イオン注入したダイヤモンド半導体のMeV級イオンビーム照射による電気的活性化の研究 : 高品質ダイヤモンド薄膜の形成と評価の研究(2) | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | microwave plasma | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | CVD | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | diamond | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | epitaxial layer | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Hall effect | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | AFM | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | surface cleaning process | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
中田, 穣治
× 中田, 穣治× 斎藤, 保直× 川崎, 克則× 服部, 俊幸× Nakata, Jyoji× Saito, Yasunao× Kawasaki, Katsunori× Hattori, Toshiyuki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have developed a microwave-plasma CVD apparatus for depositing epitaxial diamond layers on the diamond substrates. We reported in 2006 that high-quality diamond epitaxial layers were successfully deposited on these substrates, however, sharp peaks of points several microns high were also observed by using an Atomic Force Microprobe. We attributed these peaks to carbon nanotubes grown on the diamond substrate, because a high density of contamination atoms for species around iron element was detected by the Rutherford Backscattering analysis on the as-purchased diamond substrates. Therefore, in 2007, we adopted some cleaning processes for the diamond substrate surface before deposition, using acidic liquid. We successfully obtained high-quality diamond epitaxial layers without sharp high peaks, however, we observe a uneven hills. These can be attributed to the very small uneven surfaces of the as-purchased diamond substrates, due to inadequate polishing process at the diamond substrate maker. We are now reexamining the polishing process, including the etching process, to obtain clean and flat surfaces of the as-purchased diamond substrates. | |||||
| 書誌情報 |
Science Journal of Kanagawa University 巻 18, p. 45-53, 発行日 2007-05-25 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1880-0483 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA12068302 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| その他の言語のタイトル | ||||||
| その他のタイトル | Research into Electorical Activation of Ion-implanteed Diamond Semiconductor Using MeV Ion Beam Irradation : Research into Formation of High-Quality Diamond Epitaxial Thin Layers on the Diamond Substrates and Evaluation of These Layers (2) | |||||
| 出版者 | ||||||
| 出版者 | 神奈川大学 | |||||
