@article{oai:kanagawa-u.repo.nii.ac.jp:00006925,
 author = {中田, 穣治 and 斎藤, 保直 and 川崎, 克則 and 服部, 俊幸 and Nakata, Jyoji and Saito, Yasunao and Kawasaki, Katsunori and Hattori, Toshiyuki},
 journal = {Science Journal of Kanagawa University},
 month = {May},
 note = {We have developed a microwave-plasma CVD apparatus for depositing epitaxial diamond layers on the diamond substrates. We used Ib-type substrates and succeeded in depositing high-quality diamond epitaxial layers on these substrates, confirmed by measuring Raman shift spectra and the electrical characteristics of CVD layers using a Hall effect measuring instrument. However, the surface morphology of the deposited layers is not so good, as ascertained by Atomic Force Microprobe. We also measured impurity profiles in the CVD layers, using Secondary Ion Mass Spectroscopy. Moreover, we found an abrupt concentration difference of N impurity at the interface between the deposited layer and the substrate, showing that the concentration of N impurity is lower in the CVD layer than in the substrate.},
 pages = {63--75},
 title = {高品質ダイヤモンド薄膜の形成と評価の研究(2005年度神奈川大学総合理学研究所協同研究助成論文)},
 volume = {17},
 year = {2006}
}