{"created":"2024-09-20T00:16:58.074842+00:00","id":2001000,"links":{},"metadata":{"_buckets":{"deposit":"d79e681f-79af-4500-962d-cff3c5d39022"},"_deposit":{"created_by":10,"id":"2001000","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"2001000"},"status":"published"},"_oai":{"id":"oai:kanagawa-u.repo.nii.ac.jp:02001000","sets":["376:377:378:1726789902848"]},"author_link":["33611"],"control_number":"2001000","item_3_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2023-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"8","bibliographicPageStart":"1","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"Science Journal of Kanagawa University","bibliographic_titleLang":"ja"},{"bibliographic_title":"Science Journal of Kanagawa University","bibliographic_titleLang":"en"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We developed very simple and ultra large scale integration ULSI compatible fabrication processes for group-IV (Si1-xGex and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge+/Si+ hot-ion implantation into an SiO2 layer with larger bandgap EG and post-furnace annealing. We successfully demonstrated near-infrared (IR) photoluminescence (PL) from Si1-xGex-QD. Transmission electron microscopy observations of single crystallized Si1-xGex-QDs revealed that the diameter and QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 1012 cm-2, respectively. The PL spectrum of Si1-xGex- QDs was fitted by PL components of two QD structures containing Si1-xGex and Si materials. The PL intensity and PL-peak photon energy of Si1-xGex-QDs markedly depended on the Gefraction. Si1-xGex-QDs achieved maximum PL intensity at x ≈ 0.13. High PL-peak photon energy （～ 1.31 eV） of Si1-xGex-QDs is attributed to the quantum confinement effect of carriers in QDs. Secondly, we studied the PL intensity increase of Si-QD, using the novel process of hot N+-ion implantation at 800 ℃ into Si quantum dots (Si-QDs). We experimentally demonstrated that the PL intensity (IPL ) of Si-QDs increased with increasing N+-ion dose, because N atoms trapped within Si-QDs terminate the dangling bonds within Si-QDs and at the Si/SiO2 interface. Additionally, IPL of Si-QDs showed the maximum value at the optimal N+-ion dose of 5 × 1015 cm-2, which was 1.4-fold higher than that observed without hot N+-ion implantation.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"原著　2023年度神奈川大学総合理学研究所共同研究助成論文","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_3_identifier_registration":{"attribute_name":"identifier_registration","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24792/0002001000","subitem_identifier_reg_type":"JaLC"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川大学総合理学研究所","subitem_publisher_language":"ja"},{"subitem_publisher":"Research Institute for Integrated Science, Kanagawa University","subitem_publisher_language":"en"}]},"item_3_source_id_10":{"attribute_name":"item_3_source_id_10","attribute_value_mlt":[{"subitem_source_identifier":"AA12068302","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"item_3_source_id_8","attribute_value_mlt":[{"subitem_source_identifier":"1880-0483","subitem_source_identifier_type":"PISSN"}]},"item_3_version_type_16":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"水野, 智久","creatorNameLang":"ja"},{"creatorName":"ミズノ, トモヒサ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"33611","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"33611","nameIdentifierScheme":"ローカル著者ID"}]},{"creatorNames":[{"creatorName":"青木, 孝","creatorNameLang":"ja"},{"creatorName":"アオキ, タカシ","creatorNameLang":"ja-Kana"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","filename":"01 IV 族半導体量子ドットの発光特性の解明.pdf","filesize":[{"value":"2.6 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"url":"https://kanagawa-u.repo.nii.ac.jp/record/2001000/files/01 IV 族半導体量子ドットの発光特性の解明.pdf"},"version_id":"69fb39ac-a8e8-44a0-bdbf-600658c8a0b4"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"group-IV-semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum-dot","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SiGe","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SiO2","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"hot-ion","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"implantation","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"IV 族半導体量子ドットの発光特性の解明","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"IV 族半導体量子ドットの発光特性の解明","subitem_title_language":"ja"},{"subitem_title":"Physical Properties for Photon Emission from Group-IV Semiconductor Quantum Dots","subitem_title_language":"en"}]},"item_type_id":"3","owner":"10","path":["1726789902848"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2024-09-20"},"publish_date":"2024-09-20","publish_status":"0","recid":"2001000","relation_version_is_last":true,"title":["IV 族半導体量子ドットの発光特性の解明"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2024-10-09T06:25:06.864499+00:00"}