{"created":"2023-05-15T11:52:42.423306+00:00","id":15084,"links":{},"metadata":{"_buckets":{"deposit":"11ea4c01-a652-42a3-836e-456f58764066"},"_deposit":{"created_by":10,"id":"15084","owners":[10],"pid":{"revision_id":0,"type":"depid","value":"15084"},"status":"published"},"_oai":{"id":"oai:kanagawa-u.repo.nii.ac.jp:00015084","sets":["376:377:378:1428"]},"author_link":["33611","37160","33611","37159"],"item_3_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2022-07-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"20","bibliographicPageStart":"15","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"Science Journal of Kanagawa University","bibliographic_titleLang":"en"}]}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We experimentally studied three types of group-IV-semiconductor quantum-dots (IV-QDs) of Si-, SiC-, and C-QDs in a thermal SiO2 layer that were fabricated using a very simple hot-ion implantation technique for Si+, double Si+/C+, and C+ into the SiO2 layer, respectively, to realize a different wavelength photoluminescence (PL) emission from near-IR to near-UV ranges. TEM analyses newly confirmed both Si- and C-QDs with a diameter of approximately 2-4 nm in addition to SiC-QDs in SiO2. We successfully demonstrated very strong PL emission from three IV-QDs, and the peak photon energies (EPH ) (peak PL-wavelength) of Si-, SiC-, CQDs were approximately 1.56 eV (800 nm), 2.5 eV (500 nm), and 3.3 eV (380 nm), respectively. IV-QDs showed that the PL properties markedly depend on the hot-ion doses of Si and C atoms and post N2 annealing processes. Consequently, it is strainghtforward to design peak PL wavelengths by controlling the ion doses of Si+ and C+ implanted into the SiO2 layer.","subitem_description_type":"Abstract"}]},"item_3_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"原著\n2021年度神奈川大学総合理学研究所共同研究助成論文","subitem_description_type":"Other"}]},"item_3_publisher_33":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"神奈川大学総合理学研究所"},{"subitem_publisher":"Research Institute for Integrated Science, Kanagawa University"}]},"item_3_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12068302","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1880-0483","subitem_source_identifier_type":"ISSN"}]},"item_3_version_type_16":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"水野, 智久"}],"nameIdentifiers":[{"nameIdentifier":"33611","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"33611","nameIdentifierScheme":"ローカル著者ID","nameIdentifierURI":" "}]},{"creatorNames":[{"creatorName":"青木, 孝"}],"nameIdentifiers":[{"nameIdentifier":"37159","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-09-20"}],"displaytype":"detail","filename":"03 IV族半導体量子ドットの基盤研究.pdf","filesize":[{"value":"1.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"03 IV族半導体量子ドットの基盤研究","url":"https://kanagawa-u.repo.nii.ac.jp/record/15084/files/03 IV族半導体量子ドットの基盤研究.pdf"},"version_id":"449cfce6-5f71-4e77-bfd6-048591375b9f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"IV-group-semiconductor","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum-dot","subitem_subject_scheme":"Other"},{"subitem_subject":"Si","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"C","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-based photonics","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum confinement","subitem_subject_scheme":"Other"},{"subitem_subject":"hot-ion implantation","subitem_subject_scheme":"Other"},{"subitem_subject":"oxide","subitem_subject_scheme":"Other"},{"subitem_subject":"IV-group-semiconductor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum-dot","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"C","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Si-based photonics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum confinement","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"hot-ion implantation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"oxide","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"IV族半導体量子ドットの基盤研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"IV族半導体量子ドットの基盤研究","subitem_title_language":"ja"},{"subitem_title":"Experimental Study of Group-IV Semiconductor Quantum Dots","subitem_title_language":"en"}]},"item_type_id":"3","owner":"10","path":["1428"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-09-20"},"publish_date":"2022-09-20","publish_status":"0","recid":"15084","relation_version_is_last":true,"title":["IV族半導体量子ドットの基盤研究"],"weko_creator_id":"10","weko_shared_id":-1},"updated":"2023-06-19T02:11:38.099799+00:00"}