| Item type |
紀要論文 / Departmental Bulletin Paper(1) |
| 公開日 |
2019-06-07 |
| タイトル |
|
|
タイトル |
n-型ダイヤモンド半導体へのオーミック電極構造形成法の研究(1) |
|
言語 |
ja |
| タイトル |
|
|
タイトル |
Research for Ohmic Electrode Formation of n-type Diamond Semiconductors |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
n-type diamond substrate |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
ohmic contact |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
graphite layer |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
TiC compound |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
triplelayer |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
electrode |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
ion implantation |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
metal evaporation |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
departmental bulletin paper |
| 著者 |
中田, 穣治
新井, 健
佐藤, 秀人
関, 裕平
内藤, 隆平
星野, 靖
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
We have investigated the ohmic electrode structures necessary for the minute evaluation of electric properties of diamond semiconductors. Firstly, we constructed two-types of electrode for triple-layers made of Au/Pt/Ti metals. The Ti layer, which directly contacts the diamond substrate, was formed by two methods. One was Ti evaporation, and the other was Ti ion implantation that induces a graphite-like carbon (GLC) layer in the substrate simultaneously. We compared the electrical properties of these two-types of electrode using the Van der Pauw method. A good ohmic property was confirmed in the Au/Pt/GLC layer (Ti implantation) electrode at temperatures from 300 to 800°C, where the GLC layer was formed by Ti ion implantation with a total fluence of 1×1016 cm-2 at room temperature. Secondly, we aimed to simplify the electrode structures by forming a low-resistance GLC layer using Ar ion implantation (GLC (Ar implantation) electrode), instead of Ti irradiation. We also formed a single-layer electrode using Au evaporation. We compared the electric properties of these two-types of electrode by the Van der Pauw method. The ohmic contact properties were evaluated by I-V measurements at temperatures from 300 to 800°C. As a result, a good ohmic property for the n -type Ib diamond substrate with the Au/Pt/GLC (Ar irradiation) electrode structure was obtained at temperatures from 300 to 800°C. However, a good ohmic property was not observed at temperatures higher than 600°C in cases of conventional Au/Pt/Ti (evaporation) and the Au singlelayer electrode without the GLC layer. The GLC layer was therefore found to be necessary to obtain the fine ohmic property for the n -type Ib diamond. Finally, we measured ohmic properties of the Au/Pt/GLC (Ar implantation) electrode structure with a wide range of measuring voltages of around ±100 V. We succeeded in obtaining good ohmic contract with the diamond Ib substrate over a comparatively wide temperature range of 300-600°C. |
|
言語 |
en |
| 内容記述 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
原著 |
|
言語 |
ja |
| 内容記述 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
2017年度神奈川大学総合理学研究所共同研究助成論文 |
|
言語 |
ja |
| 書誌情報 |
en : Science Journal of Kanagawa University
巻 29,
p. 19-32,
発行日 2018-06-30
|
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
1880-0483 |
| 書誌レコードID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA12068302 |
| 著者版フラグ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| その他の言語のタイトル |
|
|
その他のタイトル |
Research for Ohmic Electrode Formation of n -type Diamond Semiconductors |
| 出版者 |
|
|
出版者 |
神奈川大学総合理学研究所 |
|
言語 |
ja |
| 出版者 |
|
|
出版者 |
Research Institute for Integrated Science, Kanagawa University |
|
言語 |
en |
05 n-型ダイヤモンド半導体へのオーミック電極構造形成法の研究(1) (5.6 MB)
